Пошуковий запит: (<.>A=Romanyuk B$<.>) |
Загальна кількість знайдених документів : 13
Представлено документи з 1 до 13
|
| 1. |
Romanyuk B. Mechanisms of silicon amorphization at the ultrasound action during ion implantation. — 2001 // Укр. фіз. журн.
|
| 2. |
Kruger D. Planar gettering of metal impurities in MBE grown Si and SiGe layers on Si substrates. — 2000 // Укр. фіз. журн.
|
| 3. |
Gamov D. Influence of nitrogen impurity on photoluminescence of silicon nanoclusters in SiO2 matrix. — 2009 // Укр. фіз. журн.
|
| 4. |
Rozhin A. G. Activation of porous Si blue emission due to preanodization ion implantation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
|
| 5. |
Evtukh A. A. Investigations of impurity gettering in multicrystalline silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 4.
|
| 6. |
Avramenko S. F. Study of postimplantation annealing of SiC // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 4.
|
| 7. |
Khatsevich I. Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO2 matrix // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 4.
|
| 8. |
Bunak S. V. Electrical properties of MIS structures with silicon nanoclusters // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 2.
|
| 9. |
Romanyuk B. N. Evolution of recombination parameters of "solar" monocrystalline silicon due to thermal and getting treatments // Functional Materials. - 1998. - 5, № 4.
|
| 10. |
Artamonov V. V. Study of subsurface Si layers with a latent SiO2 layer // Functional Materials. - 1998. - 5, № 4.
|
| 11. |
Romanyuk B. Stationary multistar-shape patterns of water drops in the presence of a temperature gradient // Укр. фіз. журн.. - 2016. - 61, № 11.
|
| 12. |
Sabov T. M. Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 2.
|
| 13. |
Kladko V. P. Phase transition in vanadium oxide films formed by multistep deposition // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 4.
|
НОВІ
ПОШУК
Книжкові видання та компакт-диски
