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Загальна кількість знайдених документів : 386
Представлено документи з 1 до 20
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Benkrima Y. A comparative theoretical study of ZnO and BeO oxides in terms of electronic properties // J. of Nano- and Electronic Physics. - 2022. - 14, № 2.
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| 2. |
Musaev M. A study of the third-order nonlinear susceptibility and nonlinear absorption of InAs in the middle infrared region // Вост.-Европ. журн. передовых технологий. - 2017. - № 5/5.
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| 3. |
Benkrima Y. Ab initio study of the electronic and optical properties of ZnO and BeO: first principles calculations // J. of Nano- and Electronic Physics. - 2022. - 14, № 1.
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| 4. |
Merabtine N. Accurate numerical modeling of GaAs MESFET's current-voltage characteristics // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 4.
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| 5. |
Zaidi B. Annealing and hydrogenation effects on the electrical properties of polysilicon thin films // Наносистеми, наноматеріали, нанотехнології : зб. наук. пр. - 2021. - 19, вип. 1.
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Skryshevsky V. A. Application of harmonic analysis and principal component analysis for discrimination of adsorbates in gas-sensitive ITO/nanostructured TiO2 heterojunction // J. of Nano- and Electronic Physics. - 2022. - 14, № 1.
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Stetsiv R. Ya. Band electron spectrum and optical properties of KDP-crystals under the external hydrostatic pressure // Condensed Matter Physics. - 1999. - 2, № 1.
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| 8. |
Janardan Kundu Calculation of electron mobility and effect of dislocation scattering in GaN // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 1.
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| 9. |
Luniov S. V. Calculation of electron mobility for the strained Germanium nanofilm // Журн. нано- та електрон. фізики. - 2019. - 11, № 2.
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Gaidar G. P. Changes in electrophysical properties of heavily doped n-Ge <> single crystals under the influence of thermoannealings // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 1.
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Savchenko N. D. Charge transfer phenomenon in Ge33As12Se55 - X - Si structures with nanolayer X: Sb; Bi; In; Pb // Functional Materials. - 1999. - 6, № 3.
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| 12. |
Popovich O. M. Comparative analysis of the electrical properties of nanocrystalline NiMoO4 hydrate and alpha-NiMoO4 obtained by hydrothermal method // J. of Nano- and Electronic Physics. - 2021. - 13, № 6.
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Kazantseva Z. Conductivity relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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Benhabara H. Crystalline volume fraction effect on the electronic properties of hydrogenated microcrystalline silicon mu c-Si:H investigated by ellipsometry and AMPS-1D simulation // Журн. нано- та електрон. фізики. - 2019. - 11, № 1.
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Sai P. O. Current transport through ohmic contacts to indium nitride with high defect density // Functional Materials. - 2018. - 25, № 3.
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Suprun A. D. Degeneracy effect of dynamical properties of quasi-particles of electronic origin in semiconductor materials // Functional Materials. - 2012. - 19, № 4.
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Bogoboyashchyy V. V. Density of heavy hole states of Hg1 - xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 4.
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Yodgorova D. M. Determination of potential distribution in a three-barrier structure // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2006. - 9, № 3.
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Panchenko T. V. Dielectric properties of Bi12SiO20:Mn crystals. — 2006 // Укр. фіз. журн.
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| 20. |
Onyshchenko V. F. Distribution of excess charge carriers in bilateral macroporous silicon with different thicknesses of porous layers // J. of Nano- and Electronic Physics. - 2021. - 13, № 6.
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