Пошуковий запит: (<.>U=В379<.>) |
Загальна кількість знайдених документів : 64
Представлено документи з 1 до 20
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| 1. |
Timokhov D. F. Avalanche multiplication of charge carriers in nanostructured porous silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 3.
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| 2. |
Kolinko M. O. Calculation of the spectra of characteristic electron losses in indium bromide // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 3.
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| 3. |
Palash Das Confined energy state based hypothetical observations about device parameters of AlGaN / GaN HEMT // Журн. нано- та електрон. фізики. - 2015. - 7, № 1.
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| 4. |
Gomeniuk Y. V. Current transport mechanisms in metal - high-k dielectric - silicon structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 2.
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| 5. |
Boczar T. Determining the influence of the factors that could disturb repeatability of the measurement results of the AE pulses generated by PDs. — 2004 // Фізика і хімія твердого тіла.
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| 6. |
Makhniy V. P. Effect of oxidation method of cadmium and zinc chalcogenide substrates on physical properties of CdO and ZnO heterolayers // Functional Materials. - 2009. - 16, № 1.
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| 7. |
Klochko N. P. Electrodeposition kinetics, structure and optical properties of cadmium sulfide films // Functional Materials. - 2007. - 14, № 2.
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| 8. |
Bacherikov Yu. Yu. Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 3.
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| 9. |
Bolesta I. M. Formation of nanostructures on the VdW-surface of CdI2 crystals // Укр. фіз. журн.. - 2013. - 58, № 5.
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| 10. |
Barabash M. Yu. Getting of nanocomposites thin films on the basis of carbazole from gas phase and their properties // Журн. нано- та електрон. фізики. - 2014. - 6, № 1.
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| 11. |
Nazarova T. M. Hydrogen as a source of high-temperature charge instability in silicon-on-insulator structures and field effect transistors. — 2011 // Фізика і хімія твердого тіла.
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| 12. |
Misiuk A. Hydrogen gettering in annealed oxygen-implanted silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 2.
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| 13. |
Vlaskina S. I. Mechanism of 6H-3C transformation in SiC // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 2.
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| 14. |
Dyakonov V. Phase transitions in ТbMnО3 manganites. — 2012 // Физика низ. температур.
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| 15. |
Arsentyev I. N. Porous nanostructured InP: technology, properties, application // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 16. |
Yaremchuk I. Ya. Selective unequal-thickness thin-film filters for IR spectral region // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 1.
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| 17. |
Nikonyuk E. S. Self-purification effect in CdTe:Gd crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 1.
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| 18. |
Kiselov V. S. Simple method for SiC nanowires fabrication // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 1.
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| 19. |
Rudavskii Yu. Some aspects of tight-binding approach in chemisorption theory // Condensed Matter Physics. - 2001. - 4, № 1.
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| 20. |
Yodgorova D. M. Spectral photosensitivity of the <$E bold roman {m-n sup 0 -n}> structure on the basis of epitaxial layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 1.
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