The results of studies of the spectral characteristics of the <$E roman {m-n sup 0 -n}>-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygen-doped AlGaAs layers are presented. It is experimentally revealed that own defects and oxygen impurities introduced into the thin active n-area, whose thickness is about the diffusion length, promote the greater photoresponse in the impurity spectral band (1,2 and 1,55 <$E mu>m). At the same time, impurities present in GaInAs at the background level can be excited, although ineffectively, from the quasineutral part of the active region depleted by the blocking voltage.

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