Пошуковий запит: (<.>A=Popov V$<.>) |
Загальна кількість знайдених документів : 43
Представлено документи з 1 до 20
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| 1. |
Raitchenko A. I. Alloy Concentration Fields Resulting on Dissolving of Solid Particle in the Surrounding Current-Carrying Liquid Metal. — 1999 // Металлофизика и новейшие технологии.
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| 2. |
Romanyuk B. Mechanisms of silicon amorphization at the ultrasound action during ion implantation. — 2001 // Укр. фіз. журн.
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| 3. |
Kruger D. Planar gettering of metal impurities in MBE grown Si and SiGe layers on Si substrates. — 2000 // Укр. фіз. журн.
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| 4. |
Beznosov A. B. Spontaneous magnetostriction in the Gd - Y system: analysis of phase transformations. — 2001 // Физика низ. температур.
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| 5. |
Neimash V. B. Influence of doping by the isovalent lead impurity on the parameters of n-silicon. — 2005 // Укр. фіз. журн.
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| 6. |
Gamov D. Influence of <$E bold roman Al sup +> and <$E bold roman Ti sup +> implantation on radiating properties of the nanocluster structures. — 2008 // Фотоэлектроника.
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| 7. |
Gamov D. Influence of nitrogen impurity on photoluminescence of silicon nanoclusters in SiO2 matrix. — 2009 // Укр. фіз. журн.
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| 8. |
Melnik V. AES and XPS characterization of TiN layers formed and modified by ion implantation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
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| 9. |
Popov V. G. Solar cells based on multicrystalline silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 4.
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| 10. |
Popov V. G. Characterization of the "solar" multicristalline silicon by local measurements // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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| 11. |
Romanyuk A. Low-temperature growth of diamond films using supersonic DC arcjet // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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| 12. |
Romanjuk B. Ultrasound effect on radiation damages in boron implanted silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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| 13. |
Evtukh A. A. Investigations of impurity gettering in multicrystalline silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 4.
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| 14. |
Rogacheva E. I. Temperature dependences of SnTe linear expansion coefficient // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 4.
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| 15. |
Khatsevich I. Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO2 matrix // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 4.
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| 16. |
Oberemok O. S. Formation of silicon nanoclusters in buried ultra-thin oxide layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 3.
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| 17. |
Gamov D. V. Research of recombination characteristics of Cz-Si implanted with iron ions // Укр. фіз. журн.. - 2013. - 58, № 9.
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| 18. |
Nazarov A. N. Graphene layers fabricated from the Ni/a-SiC bilayer precursor // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 4.
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| 19. |
Romanyuk B. N. Evolution of recombination parameters of "solar" monocrystalline silicon due to thermal and getting treatments // Functional Materials. - 1998. - 5, № 4.
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| 20. |
Artamonov V. V. Study of subsurface Si layers with a latent SiO2 layer // Functional Materials. - 1998. - 5, № 4.
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