Пошуковий запит: (<.>A=Rubish V$<.>) |
Загальна кількість знайдених документів : 19
Представлено документи з 1 до 19
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| 1. |
Lengyel V. Use of the configuration interaction method to describe "fine"-splitting in the bound two-quark systems. — 2002 // Укр. фіз. журн.
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| 2. |
Rubish V. M. Structure and properties of <$E bold {{roman As sub 40} {roman S} sub 60-x {roman Se} sub x}> glasess. — 2007 // Фотоэлектроника.
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| 3. |
Savchenko N. D. Amorphous-crystalline heterojunctions for optoelectronic sensors: electronic structure and properties. — 2007 // Сенсор. електрон. і мікросистем. технології.
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| 4. |
Shchurova T. N. Simulation of the surface bending of energy band for binary chalcogenide semiconductors. — 2008 // Фотоэлектроника.
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| 5. |
Rubish V. M. Electric and dielectric properties of glasses of Cu - Sb - S - I system // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 1.
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| 6. |
Malesh V. I. Polarization properties and a local structure of <$E bold {{roman (GeSe sub 2)} sub x (roman Sb sub 2 roman Se sub 3) sub 1-x}> glasses // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 4.
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| 7. |
Kostyukevych S. A. Recording the highly efficient diffraction gratings by a He-Cd laser // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 4.
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| 8. |
Rubish V. M. Photo-thermoinduced changes of transmission spectra of <$E bold {{roman As} sub 40-x {roman Sb} sub x roman S sub 60}> amorphous layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 3.
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| 9. |
Rubish V. M. Crystallization study of (As2S3)100-x(SbSI)x amorphous films by the optical method // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 3.
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| 10. |
Rubish V. M. The influence of obtaining and heat treatment conditions on the structure of As2S3 - SbSI system // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 2.
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| 11. |
Rubish V. M. Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 4.
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| 12. |
Trunov M. L. Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 4.
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| 13. |
Rubish V. M. Raman spectroscopy and X-ray diffraction studies of (GeS2)100-x(SbSI)x glasses and composites on their basis // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 1.
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| 14. |
Lengyel V. The role of relativistic kinematics in describing two-quark systems // Condensed Matter Physics. - 1998. - 1, № 3.
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| 15. |
Rubish V. M. Raman spectra and optical properties of thin <$Eroman bold {As sub 40 S sub 60 }> and <$Eroman bold {As sub 40 S sub 50 Se sub 10 }> films // Ukr. J. Phys. Optics. - 2007. - 8, № 2.
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| 16. |
Kryuchyn A. A. High-speed optical recording in vitreous chalcogenide thin films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 4.
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| 17. |
Azhniuk Yu. M. Annealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 3.
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| 18. |
Petrov V. V. Direct laser writing of microrelief structures on chalcogenide glass by laser beam recorder of master discs // Реєстрація, зберігання і оброб. даних. - 2020. - 22, № 1.
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| 19. |
Yukhymchuk V. O. Surface-enhanced Raman scattering of As2S3 and Se thin films formed on Au nanostructures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2023. - 26, № 1.
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