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Eidelman K. B. Influence of Order of Double Step Implantation of 64Zn+ and 16O+ Ions into Si on Formation of Zinc-containing Nanoparticles [Електронний ресурс] / K. B. Eidelman, K. D. Shcherbachev, N. Yu. Tabachkova, A. V. Goryachev, D. M. Migunov, D. A. Doronova // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 4. - С. 04028-1-04028-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_4_30 This paper presents the research the formation of zinc-containing nanoparticles (NPs) in Si (001) after double-step hot implantation of 64Zn+ and 16O+ ions. High-resolution Transmission Electron Microscopy (HRTEM) and X-ray Diffraction (XRD) methods were used to study a crystal structure of the samples. Depth profiles of implanted impurity atoms were measured by Secondary Ion Mass Spectrometry (SIMS). Zn NPs with a size of 3 up to 50 nm were found in the implanted samples. Zinc-containing NPs with the size of 5 - 10 nm were found in the surface layer of as-implanted Si substrates. The effect of the order of implantation on structural defects and the impurity atoms depth profiles is established.
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