The thickness dependent of electrical and piezoelectric properties of lead-free ferroelectric Ba_0,8Sr_0,2TiO₃ thin films is reported. Ba_0,8Sr_0,2TiO₃ (BST 80/20) thin films for various thickness, ranging from 150 to 550 nm, were prepared by high-frequency reactive sputtering of a ceramic target in an oxygen atmosphere on p-type Si substrate. Memory windows and effective dielectric constant of the BST film in Au/BST/Si thin film capacitors is found to increase with the increasing thickness of the film. Domain structure, domain switching and hysteresis loops of the BST 80/20 thin film were investigate via the piezoresponse force microscopy. Complete domain switching and strong piezoresponse are found in the ferroelectric BST film. The piezoelectric coefficient (d_zz^eff) and the remnant piezoelectric response (∆PR) of BST 80/20 films is found to increase with the thickness of the film.

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