For the first time, a deep study of gate control coefficient (<$Ealpha sub G>) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high <$Ealpha sub G> value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with <$Ealpha sub G> that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high <$Ealpha sub G> which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.

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