In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be<^>+ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies on the Hooke - Jeeves direct search algorithm was developed to determine the depth profiles of strain and structural disorders in the ion-modified layers. The thickness and maximum value of strain of ion-modified InSb(lll) layers were determined. For implantation energies 66 and 80 keV, doses 25 and 50 <$Emu>C, the thickness of the strained layer is about 500 nm with the maximum value of strain close to 0,1 %. Additionally, an amorphous layer with significant thickness was found in the implantation region.

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