By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley - Read - Hall lifetime is below 20 ms and the density of doping impurities or the excess electron-hole pair density is of the order of 10¹⁶ cm^-3. This recombination mechanism is related to the non-radiative exciton Auger recombination assisted by the deep impurities in the bulk. The influence of non-radiative exciton recombination on the photoconversion efficiency in solar cells has been analyzed. It has been shown that the shorter the Shockley - Read - Hall lifetime, TSHR, the stronger its effect. In particular, for TSHR = 100 mu s, this recombination channel leads to the reduction of the photoconversion efficiency by 5,5 %.

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