Наукова періодика України | Semiconductor physics, quantum electronics & optoelectronics | ||
Korotyeyev V. V. Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances / V. V. Korotyeyev // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 1. - С. 18-26. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_1_4 The theory of THz radiation transmission through the film of compensated GaN of cubic modification under action of electric and magnetic fields has been developed. In the THz frequency range, spectra of the dynamic mobility tensor have been obtained for applied steady-state electric fields of several kV/cm and magnetic fields of several T. The spectra of transmission, reflection and loss coefficients have been analyzed for the Voigt configuration used for the applied fields. It has been shown that the transmitted wave becomes elliptically polarized, and the spectra of polarization characteristics such as ellipticity and rotation angle of the large axis of polarization ellipse were investigated under conditions of cyclotron resonance and optical phonon transit-time one. It has been found that, in certain frequency bands, polarization characteristics have the features valid for both resonances. The new optical method based on the analysis of ellipticity and rotation angle spectra is offered for determination of the low-field mobility. Цитованість авторів публікації: Бібліографічний опис для цитування: Korotyeyev V. V. Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances / V. V. Korotyeyev // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 1. - С. 18-26. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_1_4. Якщо, ви не знайшли інформацію про автора(ів) публікації, маєте бажання виправити або відобразити більш докладну інформацію про науковців України запрошуємо заповнити "Анкету науковця"
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