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Sabov T. M. Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient [Електронний ресурс] / T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, O. Yo. Gudymenko, N. V. Safriuk // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 2. - С. 153-158. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_2_3 A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been fabricated on silicon and silica substrates at the temperature <$E200~symbol Р roman C> by using the direct current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOx (at <$Ex~symbol О~2>) film with the TCR close to <$E7,0~% "/" ~symbol Р roman C>.
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