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Rubish V. M. Raman spectroscopy and X-ray diffraction studies of (GeS2)100-x(SbSI)x glasses and composites on their basis [Електронний ресурс] / V. M. Rubish, V. O. Stefanovich, V. M. Maryan, O. A. Mykaylo, P. P. Shtets, D. I. Kaynts, I. M. Yurkin // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 1. - С. 61-66. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_1_14 The structure and structural changes under the isothermal annealing of (GeS2)100-x(SbSI)x (<$E 0~symbol Г~x~symbol Г~90>) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS2)100-x(SbSI)x glasses is basically built just of binary GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular fragments with homopolar Ge - Ge and S - bonds. The phase structure arising in the glass matrix at crystallization corresponds to the structure of crystalline SbSI.
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