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Krasnov A. A. Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon [Електронний ресурс] / A. A. Krasnov, S. A. Legotin, Yu. K. Omel’chenko, S. I. Didenko, V. N. Murashev, O. I. Rabinovich, S. Yu. Yurchuk, V. P. Yaromsky, A. V. Popkova // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 4. - С. 04004-1-04004-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_4_6 It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p - i - n structure is 1 cm2, which is irradiated by the of radionuclide 63 Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0,111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The maximum density of output power (Pmax) was 1,52 nW/cm2.
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