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Bikshalu K. Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lanthana Nano Oxide Layers [Електронний ресурс] / K. Bikshalu, M. V. Manasa, V. S. K. Reddy, P. C. S. Reddy, K. Venkateswara Rao // Журнал нано- та електронної фізики. - 2013. - Т. 5, № 4(2). - С. 04058-1-04058-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2013_5_4(2)__14 The intense downscaling of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) to nano range for improving the device performance requires a high-k dielectric material instead of conventional silica (SiO2) as to avoid Quantum Mechanical Tunneling towards the gate terminal which leads to unnecessary gate current. Out of all the rare earth oxide materials, since lanthana (La2O3) has significantly high dielectric constant (k) and bandgap, weіve chosen it as oxide layer for one of the MOSFETs. In this work, we simulated two MOSFETs - one with nano SiO2 oxide layer and other with nano La2O3 oxide layer in the atomic level to analyze and compare the transmission spectra, I - V characteristics and Channel conductance of both the MOSFETs.
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