Пошуковий запит: (<.>A=Molodkin V$<.>) |
Загальна кількість знайдених документів : 16
Представлено документи з 1 до 16
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| 1. |
Molodkin V. B. Theoretical and experimental principles of the differential-integral triple-crystal X-ray diffractometry of imperfect single crystals. — 1998 // Металлофизика и новейшие технологии.
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| 2. |
Grigoriev D. Energy-dispersive studies of the integrated reflectivity of bragg diffracted continuous X-ray spectrum for high-sensitive structure diagnostics of imperfect single crystal. — 2000 // Металлофизика и новейшие технологии.
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| 3. |
Klad'ko V. P. Effect of structure perfection of polar crystals on Friedel intensity ratio for X-ray reflections in the region of resonant frequencies. — 2001 // Металлофизика и новейшие технологии.
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| 4. |
Molodkin V. B. High-resolution X-ray diffraction investigations of silicon grown by the float-zone method. — 2002 // Металлофизика и новейшие технологии.
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| 5. |
Molodkin V. B. "Smoothing" of deformation in the case of X-ray asymmetrical laue diffraction in bent crystal. — 2002 // Металлофизика и новейшие технологии.
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| 6. |
Molodkin V. B. X-ray diffraction investigations of InxGa1-xAs1-yNy/GaAs multilayered strucyure. — 2002 // Металлофизика и новейшие технологии.
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| 7. |
Datsenko L. I. Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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| 8. |
Fodchuk I. M. Structural changes in multilayer systems containing <$E bold {{roman In} sub x {roman Ga} sub {1 - x} {roman As} sub {1 - y} {roman N} sub y}> quantum wells // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 4.
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| 9. |
Molodkin V. B. Double- and triple-crystal X-ray diffractometry of microdefects in silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 4.
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| 10. |
Vladimirova T. P. Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
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| 11. |
Brovchuk S. M. Models of deformation dependences of total integrated intensity of dynamical diffraction in single crystals for various diffraction conditions // Металлофизика и новейшие технологии. - 2014. - 36, № 8.
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| 12. |
Molodkin V. B. Quantum-mechanical model of interconsistent amplitude and dispersion influences of structure imperfections on the multiple-scattering pattern for mapping and characterization of strains and defects in ion-implanted garnet films // Металлофизика и новейшие технологии. - 2015. - 37, № 8.
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| 13. |
Molodkin V. B. Dynamical theory of triple-crystal X-ray diffractometry and characterization of microdefects and strains in imperfect single crystals // Металлофизика и новейшие технологии. - 2016. - 38, № 1.
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| 14. |
Velikhovskyi G. O. Solving of direct and inverse scattering problems for heterogeneous non-crystalline objects in analyzer-based imaging // Metallophysics and Advanced Technologies. - 2019. - 41, № 3.
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| 15. |
Molodkin V. B. New possibilities for phase-variation structural diagnostics of multiparametrical monocrystalline systems with defects // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 1.
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| 16. |
Molodkin V. B. Integrated dynamical phase-variation diffractometry of single crystals with defects of three and more types // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2023. - 26, № 1.
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