Пошуковий запит: (<.>A=Vlaskina S$<.>) |
Загальна кількість знайдених документів : 19
Представлено документи з 1 до 19
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| 1. |
Oleksenko P. Ph. Electrophysical characteristics of LEDs based on GaN epitaxial films. — 1998 // Фізика напівпровідників, квантова та оптоелектроніка.
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| 2. |
Vlaskina S. I. Mechanism of 6H-3C transformation in SiC // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 2.
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| 3. |
Boltovets N. S. SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 1.
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| 4. |
Vlaskina S. I. Silicon carbide LED // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 1.
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| 5. |
Vlaskina S. I. Boron, aluminum, nitrogen, and oxygen impurities in silicon carbide // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 2.
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| 6. |
Vlaskin V. I. Flexible electroluminescent panels // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 2.
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| 7. |
Vlaskin V. Reliability of AC thick-film electroluminescent lamps // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 2.
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| 8. |
Vlaskina S. I. 3C-6H transformation in heated cubic silicon carbide 3C-SiC // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
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| 9. |
Lee S. W. Silicon carbide defects and luminescence centers in current heated 6H-SiC // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 1.
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| 10. |
Vlaskina S. I. Silicon carbide phase transition in as-grown 3C-6H polytypes junction // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 2.
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| 11. |
Vlaskina S. I. Nanostructures in lightly doped silicon carbide crystals with polytypic defects // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 2.
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| 12. |
Vlaskina S. I. Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 4.
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| 13. |
Vlaskina S. I. External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 4.
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| 14. |
Vlaskina S. I. Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2016. - 19, № 1.
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| 15. |
Vlaskina S. I. Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 2.
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| 16. |
Vlaskina S. I. Nanocrystalline silicon carbide films for solar cells // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2016. - 19, № 3.
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| 17. |
Vlaskina S. I. Nanograin boundaries and silicon carbide photoluminescence // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 3.
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| 18. |
Vlaskina S. I. Nano silicon carbide's stacking faults, deep level's and grain boundary's defects // Журн. нано- та електрон. фізики. - 2018. - 10, № 5.
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| 19. |
Vlaskina S. I. Characterization of nano-bio silicon carbide // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2020. - 23, № 4.
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