Пошуковий запит: (<.>A=Indutnyi I$<.>) |
Загальна кількість знайдених документів : 16
Представлено документи з 1 до 16
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| 1. |
Indutnyi I. Z. Relaxation of photodarkening in SiO - As2(S,Se)3 composite layers. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 2. |
Lisovskyi I. P. Infrared study of thermally induced phase separation in SiOx films. — 2005 // Укр. фіз. журн.
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| 3. |
Indutnyi I. Z. Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiOx nanostructures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 2.
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| 4. |
Dan'ko V. A. Controlling the photoluminescence spectra of porous nc-Si - SiOx structures by vapor treatment // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 4.
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| 5. |
Sopinskyy M. V. Polarization conversion effect in obliquely deposited SiOx films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 3.
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| 6. |
Dan'ko V. A. Photostimulated etching of germanium chalcogenide films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 4.
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| 7. |
Michailovska K. V. Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 4.
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| 8. |
Michailovska K. V. Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 3.
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| 9. |
Dan'ko V. A. Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2015. - 18, № 4.
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| 10. |
Indutnyi I. Z. Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 3.
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| 11. |
Lytvyn P. M. Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2018. - 21, № 2.
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| 12. |
Hreshchuk O. M. Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 2.
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| 13. |
Dan'ko V. A. Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 3.
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| 14. |
Dan'ko V. A. Formation of laterally ordered arrays of noble metal nanocavities for SERS substrates by using interference photolithography // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 1.
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| 15. |
Indutnyi I. Z. The effect of surface plasmon-polaritons on the photostimulated diffusion in light-sensitive Ag - As4Ge30S66 structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 4.
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| 16. |
Michailovska K. V. Luminescent and Raman study of nanostructures formed upon annealing of SiOx:Sm films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2023. - 26, № 1.
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