Пошуковий запит: (<.>U=В379.271<.>) |
Загальна кількість знайдених документів : 386
Представлено документи з 1 до 20
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Levchenko A. N. The peculiarity of electric conductance of KDP single crystals // Functional Materials. - 2009. - 16, № 3.
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Karbivskyy V. L. Electronic structure peculiarities of disordered Mn and Co diphosphates // Functional Materials. - 2012. - 19, № 4.
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Vlasenko O. I. Study of surface influence on the n-Ge(110) electroreflectance spectra and their polarization spectroscopy // Functional Materials. - 2009. - 16, № 3.
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Soroka A. P. Electron structure of calcium and cadmium apatites // Functional Materials. - 2010. - 17, № 3.
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Cherginets V. L. On the behavior of europium oxocompounds in molten CsI // Functional Materials. - 2010. - 17, № 3.
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Suprun A. D. Degeneracy effect of dynamical properties of quasi-particles of electronic origin in semiconductor materials // Functional Materials. - 2012. - 19, № 4.
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Shpotyuk O. I. Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 3.
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Фреїк Д. М. Структура і електричні властивості тонких плівок чистого і легованого вісмутом телуриду свинцю // Журн. нано- та електрон. фізики. - 2012. - 4, № 2 (ч. 1).
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Borblik V. L. Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2014. - 17, № 3.
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Suprun A. D. The centrally-symmetric solutions of electronic excitations of semiconductors in the conditions of relativistic like degeneracy of dynamical properties // Functional Materials. - 2014. - 21, № 1.
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Григорчак І. І. Супрамолекулярні структури для підвищення ефективності фарадеєвського і ємнісного накопичення енергії // Сенсор. електрон. і мікросистем. технології. - 2013. - 10, № 4.
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Samoylov A. M. Electrical properties and mechanisms of the point defect formation in PbTe(In) films prepared by modified "hot wall" technique // Functional Materials. - 2011. - 18, № 1.
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Shovak I. I. Electrical and optical properties of thin-film layers with chalcogenide gradient structure // Functional Materials. - 1999. - 6, № 3.
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Andronov V. M. Interactions in Ga - AgAu thin film system // Functional Materials. - 1999. - 6, № 4.
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Savchenko N. D. Charge transfer phenomenon in Ge33As12Se55 - X - Si structures with nanolayer X: Sb; Bi; In; Pb // Functional Materials. - 1999. - 6, № 3.
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Kaganovich E. B. Photoelectric studies of porous silicon // Functional Materials. - 1999. - 6, № 3.
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Il'in I. Yu. Some features of GaAs surface passivation // Functional Materials. - 1999. - 6, № 4.
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Semenyuk A. Study of electrophysical parameters and tensoeffects in n-type Si< Ge > srystals // Functional Materials. - 2001. - 8, № 3.
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Slipchenko N. I. Thin films of organic semiconductor for gas sensor development // Functional Materials. - 2003. - 10, № 3.
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20. |
Dmytrenko O. P. Photocatalysis by TiO2 films at structure relaxation // Functional Materials. - 2007. - 14, № 1.
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