The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the direction of its propagation, as well as the appearance of a gradient ponderomotive force in an inhomogeneous wave have been analyzed. The features of the appearance of an electric force acting on charged point defects as a result of formation of electron-hole junctions around charged dislocations have been studied. Analytical relationships describing the dynamics of impurity ions in semiconductor structures exposed to microwave radiation have been presented.

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