Cadmium selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Nr⁺⁷ ions at fluences of 1 x 10 ¹¹ and 1x 10 ¹²cm^-2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I - V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I - V measurement revels that decrease in resistivity with increasing fluence.

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