The magnetic moment and magnetization in GaAs/Ga_0,84In_0,16As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn delta-layer thicknesses near GaInAs-quantum well (~ 3 nm) in temperature range T = 1,8 - 300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga_0,84In_0,16As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.

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