<$E roman {A sup 3 B sup 5}> solid-state solution LEDs are highly desirable for their potential application in new emerging lighting technologies such as traffic signals, common lighting, architecture, signboards and communication. We present a solid-state integrated <$E roman {Si "/" A sup 3 B sup 5}> device that consists of a single chip graded bandgap heterostructure with quantum well active layers, electron and hole injectors connected with Si MOS transistors integrated circuits. Active RGB layers are separated by tunnel barrier layers, which can be driven by transistors of the Si IC part of the chip. Ion stimulation of solubility of III-nitrides-arsenides and nano-template Al2O3 epitaxy of GaN on Si substrate are presented. Self-organised nanostructures with a low dislocation density are obtained in this technology. Further optimization of epitaxy is likely to improve these results by at least an order of magnitude, drop the density of defects and increase luminescence quantum efficiency.

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