Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with <$E roman Mn sup +> (Si:Mn) or with <$E roman V sup +> (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with <$E roman V sup +> as well as that co-implanted additionally with <$E roman Mn sup +> ions (Si:V, Mn), with dosages <$E D sub roman V+~symbol Г~5~cdot~10 sup 15~roman cm sup -2> and <$E D sub roman Mn+~=~1~cdot~10 sup 15~roman cm sup -2>. The samples were processed for 1 - 5 h at <$E roman HT~symbol Г~1270> К under <$E roman HP~symbol Г~1,1> GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT - (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.

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