The monocrystalline silicon is one of the most important materials in the view of the fact that it is used in contemporary electronics. The issues concerning silicon processing methods up to now attract a lot of attention of scientists all around the world. From this point of view, the influence of constant magnetic field upon the monocrystalline Czochralski silicon had been studied. The processing of monocrystalline Cz-Si (alloyed with Zr, Hf, Mg, Al, and unalloyed) in weak constant magnetic field (0,07 Tesla) has been carried out. The influence of weak constant magnetic field on the structure, mechanical and electrophysical properties of silicon, namely, increasing of internal defects density, forming of polycrystalline structure in unalloyed silicon, significant increment of microhardness and considerable degradation of minority carriers time of life has been noted. The qualitative explanations of magneto-stimulated phenomena in studied specimens from the viewpoint of spin-conversion as well as changes of electronic states density in the space-time as well as that of the influence of alloying elements on the critical points of first type phase transitions in silicon have been suggested. It has been found that using the weak constant magnetic field lets us to manage the properties of silicon by acceleration or slowing the shear and shear-diffusion phase transitions.

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