The effects of geometric features of p-type Si_1-xGe_x, (x = 0,01 - 0,05) whiskers on their thermoelectric properties have been studied. Oblique whiskers of various diameters (10 - 100 pm) with boron impurity concentration ranging from 10¹⁷ to 10²⁰ cm^-3 have been studied in the temperature range of 290 - 390 K. The Seebeck coefficient and resistivity of SiGe whiskers increased, while thermal conductivity decreased with decreasing diameter of crystals. However, the thermoelectric figure of merit of SiGe whiskers remained low resembling that of bulk pure silicon. The influence of dopant impurities and germanium spatial distribution on the electronic and thermal transport in Si_1-xGe_x, whiskers was likely dominant, however, little effect of the geometry was also observed. The engineering of whiskers shape and dimensions (up to 15 % improvement of thermopower in whiskers with certain obliquity), combined with appropriate doping, would likely allow for substantial improvement of their thermoelectric performance even in bulk-like scales.

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