By using an electrical-optical AMPS-1D program (One Dimensional Analysis of Microelectronic and Photonic structures), a n-i-p type solar cell, based on hydrogenated amorphous silicon (alpha-Si : H) and hydrogenated nanocrystalline silicon oxide (nc-SiO_x : H) has been investigated and simulated. The numerical analysis describes the modeling of the external cell performances, like, the short-circuit current (J_SC), the open circuit voltage (V_OC), the fill factor (FF) and efficiency (E_ff) with the oxygen content in the p-nc-SiO_x : H window layer by varying its mobility band gap (E_g) associated simultaneously to the effect of the absorber layer (i-alpha-Si : H) thickness. Also, the i-alpha-Si : H absorber layer band gap was optimized. The simulation result shows that the V_OC depend strongly on the band offset (ΔE _V) in valence band of p-side. But, V_OC does not depend on the thickness of the intrinsic layer. However, V_OC increases when the energy band gap of the intrinsic layer is higher. It is demonstrated that the highest efficiency of 10,44 % (J_Sc = 11,67, mA/cm²; FF = 0,829; V_OC = 1070 mV) has been obtained when values of p-nc-SiO_x : H window layer band gap and i-alpha-Si : H absorber layer thickness are 2,10 eV, 1,86 eV, and 550 nm, respectively.

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