The mechanisms of signal relaxation, associated with the removal processes of nonequilibrium charge from the space charge region of the image sensor on the basis of non-ideal heterojunction were investigated. The mechanism of the observed two-stage process was determined. Microscopic techniques (AFM, SEM) were used to estimate HJ properties (grain size, roughness) and their relations with HJ processing parameters. Novel results concerning CdS - Cu2S HJ surface morphology and impurities depth distribution were obtained. In particular, the question of observed variation of surface photosensitivity and components interdiffusion on heteroborder were clarified. Also the comparison of samples formed by two different methodics (electrodynamical spraying and vacuum evaporation techniques) was made. X-Ray diffraction (XRD) was performed in order to detect Cu-S compounds at CdS - Cu2S heterojunctions, fabricated by the vacuum deposition of CdS on a glass substrate and Cu2S layer, formed in substitution mode. The distribution of several stoichiometric phases of copper (I) sulfide was obtained as main result.

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