In contact with a superconductor a normal metal modifies its properties due to Andreev reflection. In the current work the local density of states (LDOS) of superconductor-normal metal Mo78Ge22 - Au bilayers are studied by means of STM applied from the Au side. Three bilayers have been prepared on silicate glass substrate consisting of 100, 10 and 5 nm MoGe thin films covered always by 5 nm Au layer. The tunneling spectra were measured at temperatures from 0,5 to 7 K. The two-dimensional cross-correlation between topography and normalized zero-bias conductance indicates a proximity effect between 100 and 10 nm MoGe thin films and Au lay-er where a superconducting gap slightly smaller than that of bulk MoGe is observed. The effect of the thinnest 5 nm MoGe layer on Au leads to much smaller gap moreover the LDOS reveals almost completely suppressed coherence peaks. This is attributed to a strong pair-breaking effect of spin-flip processes at the interface between MoGe films and the substrate.In contact with a superconductor a normal metal modifies its properties due to Andreev reflection. In the current work the local density of states (LDOS) of superconductor-normal metal Mo78Ge22 - Au bilayers are studied by means of STM applied from the Au side. Three bilayers have been prepared on silicate glass substrate consisting of 100, 10 and 5 nm MoGe thin films covered always by 5 nm Au layer. The tunneling spectra were measured at temperatures from 0,5 to 7 K. The two-dimensional cross-correlation between topography and normalized zero-bias conductance indicates a proximity effect between 100 and 10 nm MoGe thin films and Au lay-er where a superconducting gap slightly smaller than that of bulk MoGe is observed. The effect of the thinnest 5 nm MoGe layer on Au leads to much smaller gap moreover the LDOS reveals almost completely suppressed coherence peaks. This is attributed to a strong pair-breaking effect of spin-flip processes at the interface between MoGe films and the substrate.

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