Floating zone melting method with optical heating is elaborated to grow single crystals of the substituted hexaferrites BaTixCoxFe12-2xO19 and SrxTixCoxFe12-2xO19 (<$E 0,8~symbol Г~x~symbol Г~2>). The dynamics of the growth process is studied and results of the analysis of impurity phases appearing in the initial stages of the crystal growth are presented. Compositions and unit-cell parameters of crystals are determined. Electrical, magnetic and magnetoelectric properties of grown crystals are investigated at temperatures 2 - 365 K and magnetic fields up to 50 kOe. It is shown that the resistivity of annealed in oxygen crystals at room temperature is ~ 10<^>6 Ohm-cm while at helium temperatures the crystals become good insulators. Magnetic measurements reveal conical spin structures in the crystals at some concentrations and temperatures. Magnetic field induced electric polarization of the low value (~ <$E 0,3~mu roman {C "/" m} sup 2>) is detected at liquid helium temperatures for compositions with Ti and Co concentrations x = 0,8 - 0,9.

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