Annealing of complex semiconductors GaP and CdP2, irradiated at room temperature by high fluences of electrons within 1 - 30 MeV energy interval and 80 MeV <$Ealpha>-particles, was carried out, and main electrical parameters (conductivity <$Esigma>, carrier concentration n and mobility <$Emu>) as well as the positron lifetime <$Etau> were studied and analyzed. When the point defect concentration excesses some critical value, defects of new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High temperature annealing of the irradiated sample with increased vacancy concentration causes appearance of the vacancy voids with a lower electron density.

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