The dose dependence of tensoresistance <$Erho sub x "/" rho sub 0>, which was measured at the symmetrical orientation of the deformation axis (compression) relatively to all isoenergetic ellipsoids both in the initial and in <$Egamma>-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence <$Erho sub x "/" rho sub 0 ~=~f(X)>. Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out and the mechanical stress X was applied.

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