A model of n<^>+-n-n<^>+ diode is analyzed using analytical and numerical methods. First, it was conducted a phase-plane analysis, which was aimed at further calculations for low and high injection approximations. A numerical method was used to calculate changes of the field, bias and concentration throughout the diode for different current values. Expected depletion of free-charge carriers near the anode, and enrichment near the cathode was observed. Current-voltage characteristics were built for different concentrations of traps in base. Increasing bias for same value of current with increasing traps concentration was predicted.

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