Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (R_opt) and optical noise equivalent power (NEP_opt) of FETs in the broadband detection regime can achieve R_opt ~ 23 kV/W and NEP_opt ~ · 10^-12 W/Hz^1/2, respectively. At low radiation frequency Ʋ in the THz spectral region the NEP_opt of SBD detectors can be better by a factor of ~ 1,75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

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