The effect of <$E8,6~cdot~10 sup 17 ~roman {n "/" cm} sup 2> with fast neutron irradiation on the magnetic susceptibility of Si0,97Ge0,03 thread-like crystals (whiskers) with impurity concentration near metal-insulator junction has been studied. Significant differences have been observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz - Si. The low-temperature (4,2 - 40 K) changes of magnetoresistance in magnetic fields up to 14 T, caused by irradiation, have been studied. It has been established that at temperatures near 4,2 K, a significant contribution to the conductivity is made by light charge carriers of low concentration but with high mobility. The level supplying these charge carriers has the energy of <$Eepsilon~=~2,1> meV, and with application of magnetic field it increases up to <$Eepsilon~=~2,5> meV in approx. 10 T field. It demonstrates the fact that the reason of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is due to holes, the activation energy whereof is <$Eepsilon~=~11,5> meV, which is practically independent of the magnetic field.

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