In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown original defects ar reported. Undoped SiC single crystals with the impurity concentration of <$EN sub D~-~N sub A> ~ <$E(2~-~8)~cdot~10 sup 16~roman cm sup -3>, <$E N sub A> ~ <$E (2~-~8)~cdot~10 sup 17~roman cm sup -3>, and <$E N sub D~-~N sub A> ~ <$E (1~-~5)~cdot~10 sup 17~roman cm sup -3>, <$E N sub D~symbol Г~1~cdot~10 sup 18~roman cm sup -3> were investigated. The analysis of absorption, excitation and low temperature photoluminescence spectra suggests formation of a new micro-phase during the growth process and appearance of the deep-level (DL) spectra. The complex spectra of the crystals can be decomposed into the so-called DLi (i = 1, 2, 3, 4) spectra. The appearance of the DLi spectrum is associated with formation of new nano-phases. Data of photoluminescence, excitation and absorption spectra show the uniformity of different DLi spectra. Structurally, the general complexity of the DLi spectra correlated with the degree of disorder of the crystal and was connected with onedimensional disorder, the same as in the case of the stacking fault (SFi) spectra. The DLi spectra differ from SFi spectra and have other principles of construction and behavior. The DLi spectra are placed on a broad donor-acceptor pairs emission band in crystals with higher concentrations of non-compensated impurities. The excitation spectra for the DLi and SFi spectra coincide and indicate formation of nanostructures <$E14 roman H sub 1 symbol ... 4334 symbol ъ>, <$E10 roman H sub 2 symbol ... 55 symbol ъ>, <$E 14 roman H sub 2 symbol ... 77 symbol ъ>, <$E8 roman H sub 1 symbol ... 44 symbol ъ>.

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