In this paper, we report the effect of Sb additive on dielectric properties of two binary Se - In glassy systems, comparing the properties of a-Se90In10, a-Se75In25 and a-Se75In10Sb15 glassy alloys. The temperature and frequency dependence of epsilon' and epsilon'' in glassy Se90In10, Se75In25, and Se75In10Sb15 alloys are studied by measuring the capacitance and dissipation factor within the frequency 1 kHz - 5 MHz and temperature 300 - 350 K ranges. Debye like relaxation of dielectric behavior has been observed, which is in agreement with the Guintini theory of dielectric dispersion based on two electron hopping over a potential barrier and is applicable in the present case. Epsilon', epsilon'' and loss tangent (Tan delta) are found highly frequency and temperature dependent. Dependence of these dielectric parameters on the Sb metallic impurity has also been found in the present glassy system. The peculiar role of the third element Sb, as an impurity in the pure binary Se90In10 and Se75In25 glassy alloys, is also discussed in terms of electronegativity difference and covalent character between the elements used in making the aforesaid glassy system.

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