In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound <$E {roman Hg} sub 1-x {roman Cd} sub x roman Te> is presented. The measurements were performed in the temperature range ftom 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was <$E 1,3~cdot~10 sup -8> and <$E 5,4~cdot~10 sup -9> W/Hz<^>1/2 at bias current I = 1 mA and I = 0, respectively.