Пошуковий запит: (<.>A=Klad'ko V$<.>) |
Загальна кількість знайдених документів : 15
Представлено документи з 1 до 15
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| 1. |
Klad'ko V. P. Influence of absorption level on mechanisms of Bragg-diffracted x-ray beam formation in real silicon crystals. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 2. |
Grigoriev D. Energy-dispersive studies of the integrated reflectivity of bragg diffracted continuous X-ray spectrum for high-sensitive structure diagnostics of imperfect single crystal. — 2000 // Металлофизика и новейшие технологии.
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| 3. |
Klad'ko V. P. Effect of structure perfection of polar crystals on Friedel intensity ratio for X-ray reflections in the region of resonant frequencies. — 2001 // Металлофизика и новейшие технологии.
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| 4. |
Klad'ko V. P. Investigation of GaAs/AlAs short-periodic superlattices by high-resolution X-ray diffractometry. — 2004 // Укр. фіз. журн.
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| 5. |
Klad'ko V. P. Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 6. |
Semenova G. N. Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 2.
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| 7. |
Seitmuratov M. S. Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 3.
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| 8. |
Klad'ko V. P. Recrystallization processes in screen-printed CdS films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 2.
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| 9. |
Yukhymchuk V. O. Optical and acoustical phonon modes in superlattices with SiGe QDs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 4.
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| 10. |
Klad'ko V. P. Screen-printed p-CdTe layers for CdS/CdTe solar cells // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 2.
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| 11. |
Belyaev A. E. On the tunnel mechanism of current flow in Au - TiBx - n-GaN - i-Al2O3 Schottky barrier diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 3.
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| 12. |
Sachenko A. V. Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 4.
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| 13. |
Belyaev A. E. Role of dislocations in formation of ohmic contacts to heavily doped n-Si // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 2.
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| 14. |
Sachenko A. V. Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-<$E bold n sup +>-GaN ohmic contacts // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 4.
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| 15. |
Molodkin V. B. Dynamical theory of triple-crystal X-ray diffractometry and characterization of microdefects and strains in imperfect single crystals // Металлофизика и новейшие технологии. - 2016. - 38, № 1.
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