Пошуковий запит: (<.>A=Lysenko V$<.>) |
Загальна кількість знайдених документів : 41
Представлено документи з 1 до 20
|
| | |
| 1. |
Lysenko V. S. High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs. — 1998 // Фізика напівпровідників, квантова та оптоелектроніка.
|
| 2. |
Indutnyy I. Z. Kinetics of thermally-induced structural phase transformations and formation of silicon nanoparticles in thin SiOx films. — 2006 // Наносистеми, наноматеріали, нанотехнології.
|
| 3. |
Ostrovskaya L. Yu. Thermal treatment effect on the tin melt adhesion to the surface of amorphous silicon carbide films. — 2006 // Фізика і хімія твердого тіла.
|
| 4. |
Rudenko T. E. Electrical properties of FinFET structures. — 2007 // Сенсор. електрон. і мікросистем. технології.
|
| 5. |
Nazarov A. N. Electroluminescence, charge trapping and degradation of the silicon dioxide implanted by carbon and silicon ions. — 2008 // Фотоэлектроника.
|
| 6. |
Nazarova T. M. Hydrogen as a source of high-temperature charge instability in silicon-on-insulator structures and field effect transistors. — 2011 // Фізика і хімія твердого тіла.
|
| 7. |
Davydov O. N. Species diversity of carp, Cyprinus carpio (Cypriniformes, Cyprinidae), parasites in some cultivation regions. — 2011 // Вестн. зоологии.
|
| 8. |
Lysenko V. S. Effect of the charge state of traps on the transport current in the SiC/Si heterostructure // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
|
| 9. |
Lysenko V. S. Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 2.
|
| 10. |
Gomeniuk Yu. V. Properties of SiGe/Si heterostructures fabricated by ion implantation technique // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
|
| 11. |
Kunets V. P. Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 2.
|
| 12. |
Nazarov A. N. Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 1.
|
| 13. |
Houk Y. Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to <$E bold gamma>-irradiation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2006. - 9, № 2.
|
| 14. |
Indutnyy I. Z. Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2006. - 9, № 1.
|
| 15. |
Nazarov A. N. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 2.
|
| 16. |
Lysenko V. S. Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 2.
|
| 17. |
Nazarov A. N. Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 4.
|
| 18. |
Nazarov A. N. Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2009. - 12, № 1.
|
| 19. |
Nazarov A. N. Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 4.
|
| 20. |
Lozovski V. Can nanoparticles be useful for antiviral therapy? // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
|
| | |
НОВІ
ПОШУК
Книжкові видання та компакт-диски
