Рассмотрен принцип работы однопереходных тензотранзисторов. Показано, что тензочувствительность однопереходного транзистора с управляющим р-п-переходом на порядок выше, чем у простого однопереходного транзистора. Сделан вывод о том, что предложенный преобразователь давления с частотным выходом имеет практический интерес для создания устройств с повышенными требованиями к помехозащищенности и точности измерения информационного сигнала.

Silicon pressure transducers with frequency output are simulated and designed. The sensitive elements of the transducers are strain sensitive unijunction transistors. Two types of the strain sensitive unijunction transistors are investigated: simple unijunction transistor and unijunction transistor with the controlling p-n-junction. The controlled unijunction transistor could be considered as integration of unijunction and controlling bipolar transistors in the one semiconductor device. The strain sensitive unijunction transistors have horizontal structures and are integrated in the planar side of the silicon square-shaped diaphragm with two rigid islands (the EE-type diaphragm). Using Green's function formalism characteristics of the pressure transducer are investigated and the optimal topology of the sensitive element is determined. It has been shown that elastic strain could modulate the peak and valley voltages of the simple unijunction transistor. The sensitivity of the controlled unijunction strain sensitive transistor is an order higher of the sensitivity of the simple strain sensitive unijunction transistor. The sensitivity of the unijunction transistor with controlling p-n-junction is mainly defined by the effect of elastic strain on the transport coefficient of the controlling transistor. We suppose that high sensitive pressure sensors with the frequency output could be created on base of the unijunction transistors.