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1.Ж16425 Burachas S. F. Advanced scintillation single crystals based on complex oxides with large atomic number [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.237-239
2.Ж16425 Sachenko A. V. Excitonic effects in band-edge luminescence of semiconductors at room temperatures [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.150-156
3.Ж16425 Rogalski A. Heterostructure infrared photodiodes [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.111-120
4.Ж16425 Blonsky I. V. Induced polar materials for intense radiation monitoring [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.170-173
5.Ж16425 Senchishin V. G. Manufacture and study of new polystyrene scintillators [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.223-226
6.Ж16425 Kiv A. E. Microstructure of the relaxed (001) Si surface [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.157-160
7.Ж16425 Anokhov S. P. New interpretation of the boundary diffracted wave origin [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.254-257
8.Ж16425 Vorona I. New possibility of retrospective EPR dosimetry [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.219-222
9.Ж16425 Puzikov V. M. Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.185-190
10.Ж16425 Kudin A. P. Radiation-induced changes in infra-red spectrum of black zinc diphosphide monocrystals [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.161-164
11.Ж16425 Valyukh S. Simulation of obliquely incident light propagation through a general twisted nematic liquid crystal cell by the Jones matrix technique [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.258-263
12.Ж16425 Griban V. M. Some features of two-photon absorption in static electric field [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.144-149
13.Ж16425 Zorenko Yu. Application of scintillators based on single-crystalline Lu3Al5 O12 : Ce3+ films for radiation monitoring in biology and medicine [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.213-218
14.Ж16425 Vyklyuk J. I. Calculation of absorption coefficients of InSb1 - хBiх solid solutions [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.174-177
15.Ж16425 Salo V. I. Effect of growth conditions on structure quality of KDP crystals [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.203-206
16.Ж16425 Dashevsky Z. Functionally graded PbTe-based compound for thermoelectric applications [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.181-184
17.Ж16425 Masselink W. T. InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.121-125
18.Ж16425 Baschenko S. M. Multiwave laser source for simultaneous sounding ozone and critically related to ozone chemicals [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.244-246
19.Ж16425 Zagoruiko Yu. A. Physical properties of ZnSe - MgSe, ZnSe - CdS solid solutions and possibilities of their application in IR engineering [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.165-169
20.Ж16425 Masselink W. T. Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2000. т.Т. 3,N № 2.-С.126-137
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