Пошуковий запит: (<.>A=Tomashik Z$<.>) |
Загальна кількість знайдених документів : 9
Представлено документи з 1 до 9
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1. | Ж16425 Tomashik Z. F. Dissolution of indium arsenide in nitric solutions of the hydrobromic acid [Текст] 2: 1 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.-С.80-83
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2. | Ж26618 Gumenyuk O. R. Chemical etching of CdTe and Cd1-xZnxTe solid solutions in the H2O2 - HJ-tartaric acid solutions [Текст] 4: 1 // Фізика і хімія твердого тіла.-С.127-132
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3. | Ж16425 Tomashik Z. F. Chemical dissolution of indium arsenide in solutions of Br2 - HBr system [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 1999. т.Т. 2,N № 4.-С.73-75
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4. | Ж16425 Tomashik Z. F. Chemical dynamic polishing CdTe and CdxHg1-xTe single crystals by using solutions of H2O2 - HCl-tartaric acid system [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2004. т.Т. 7,N № 4.-С.452-455
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5. | Ж16425 Denysyuk R. O. Chemical treatment of monocrystalline cadmium telluride and <$E bold {{ roman Cd} sub 1-x {roman Mn} sub x roman Te}> solid solutions by H2O2 - HI - citric acid etchant compositions [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2009. т.Т. 12,N № 2.-С.125-128
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6. | Ж16425 Savchuk O. A. CdTe quantum dots precipitation of monodisperse fractions from colloid solutions [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2010. т.Т. 13,N № 4.-С.428-431
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7. | Ж16425 Pavlovich I. I. Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO3 - HCl solutions [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2011. т.Т. 14,N № 2.-С.200-202
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8. | Ж41115 Bilevych Ye. O. Chemical etching of CdxHg1 - xTe solid solution single crystals in solutions of HNO3 - HCl-organic acid systems [] // Functional Materials, 2001. т.Т. 8,N № 3.-С.488-492
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9. | Ж41115 Tomashik Z. F. Chemical etching of CdTe, CdxHg1-xTe, ZnxCd1-xTe and Те in the HNO3 - HCl-citric acid [] // Functional Materials, 2005. т.Т. 12,N № 2.-С.396-400
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