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Загальна кількість знайдених документів : 25
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| 1. | Ж16425 Shevchenko V. B. Evidence for photochemical transformations in porous silicon [Текст] 2: 2 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.-С.50-53
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| 2. | Ж16425 Boltovets N. S. Comprehensive studies of defect production and strained states in the silicon epitaxial layers and device structures based on them [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2001. т.Т. 4,N № 4.-С.318-322
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| 3. | Ж16425 Makara V. A. Structure and luminescence study of nanoporous silicon layers with high internal surface [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2003. т.Т. 6,N № 4.-С.492-495
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| 4. | Ж16425 Makara V. A. Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2006. т.Т. 9,N № 2.-С.1-3
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| 5. | Ж16425 Totsky I. M. Effect of neutron irradiation on non-equilibrium HfB2-B4C composites [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2013. т.Т. 16,N № 2.-С.162-165
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| 6. | Ж26988 Rudenko R. M. Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin [] // Український фізичний журнал, 2013. т.Т. 58,N № 8.-С.769-772
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| 7. | Ж26988 Neimash V. B. Microstructure of thin Si - Sn composite films [] // Український фізичний журнал, 2013. т.Т. 58,N № 9.-С.865-871
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| 8. | Ж16425 Neimash V. B. Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2013. т.Т. 16,N № 4.-С.331-335
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| 9. | Ж16425 Totsky I. N. Effect of 1,9-MeV electron irradiation on characteristics of reactively-pressed TiB2 - TiC ceramic composites [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2013. т.Т. 16,N № 4.-С.382-386
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| 10. | Ж14161 Makara V. A. Magnetic-field-stimulated modification of surface charge and defect content in silicon for solar energy storage [] // Металлофизика и новейшие технологии, 2014. т.Т. 36,N № 2.-С.189-193
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| 11. | Ж41115 Pavlov E. V. Calculation of energy differences for polytypic silicon carbide modifications using the Bashelet-Hamann-Shluter pseudo-potentials [] // Functional Materials, 2003. т.Т. 10,N № 3.-С.439-443
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| 12. | Ж41115 Makara V. A. Relation between structure inhomogeneities and relaxation processes in excited silicon crystals [] // Functional Materials, 2004. т.Т. 11,N № 2.-С.386-388
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| 13. | Ж41115 Makara V. A. The properties of porous silicon obtained under different anodic etching conditions [] // Functional Materials, 2003. т.Т. 10,N № 3.-С.444-446
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| 14. | Ж41115 Boltovets N. S. Thermal stability of titanium nitride layers synthesized by thermal-ion reactive technique [] // Functional materials, 2002. т.Т. 9,N № 3.-С.491-497
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| 15. | Ж41115 Makara V. A. Post-anodic formation of luminescent porous silicon layers in atmospheric environment [] // Functional Materials, 2005. т.Т. 12,N № 1.-С.78-82
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| 16. | Ж41115 Popov A. Yu. A theoretical model for calculation of biphase composite failure energy [] // Functional Materials, 2005. т.Т. 12,N № 3.-С.432-435
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| 17. | Ж41115 Popov O. Yu. Calculation of fracture toughness for a biphase ceramic material [] // Functional Materials, 2006. т.Т. 13,N № 1.-С.26-29
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| 18. | Ж41115 Makara V. A. Effect of magnetic field on microhardness of germanium [] // Functional Materials, 2007. т.Т. 14,N № 1.-С.74-76
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| 19. | Ж41115 Makara V. A. Silicon crystal strength reduction due to magnetoresonance [] // Functional Materials, 2007. т.Т. 14,N № 2.-С.192-194
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| 20. | Ж41115 Makara V. A. Effect of a weak constant magnetic field on the silicon single crystal structure [] // Functional Materials, 2011. т.Т. 18,N № 1.-С.50-55
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