Пошуковий запит: (<.>A=Boiko I$<.>) |
Загальна кількість знайдених документів : 21
Представлено документи з 1 до 20
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1. | Ж16425 Boiko I. I. Investigation of the photoelastic effect in Si at high values of the absorptivity [Текст] 2: 2 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.-С.54-58
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2. | Ж72727 Boiko I. F. Microprocessor use for statistical processing of signals [Текст]: 3 // Електроніка та системи упр.-С.10-14
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3. | Ж16425 Boiko I. I. Instability of 2DEG interacting with drifting 3DEG [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2008. т.Т. 11,N № 2.-С.148-150
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4. | Ж16425 Boiko I. I. Electron-electron drag in crystals with multivalley band [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2009. т.Т. 12,N № 3.-С.212-217
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5. | Ж16425 Boiko I. I. Specific thermoemf and Hall-effect in crystals with monopolar conductivity [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2009. т.Т. 12,N № 1.-С.47-52
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6. | Ж16425 Boiko I. I. Band carriers scattering on impurities [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2010. т.Т. 13,N № 2.-С.214-220
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7. | Ж16425 Boiko I. I. Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2009. т.Т. 12,N № 4.-С.349-356
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8. | Ж16425 Boiko I. I. Influence of electron-electron drag on piezoresistance of n-Si [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2011. т.Т. 14,N № 2.-С.183-187
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9. | Ж16425 Boiko I. I. Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2011. т.Т. 14,N № 3.-С.357-361
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10. | Ж16425 Boiko I. I. Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2011. т.Т. 14,N № 4.-С.437-440
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11. | Ж16425 Boiko I. I. Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2012. т.Т. 15,N № 2.-С.129-138
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12. | Ж28852/б. Boiko I. Salicylic acid as growth regulator for cadmium-stressed plants [] // Вісник Львівського університету. Серія Біологічна, 2012,N Вип. 58.-С.271-279
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13. | Ж28852/б. Boiko I. Spectral analysis of photosynthetic pigments of plants, effected by cadmium ions and salicylic acid [] // Вісник Львівського університету. Серія Біологічна, 2013,N Вип. 62.-С.331-338
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14. | Ж16425 Boiko I. I. Influence of field dependent form of collision integral on kinetic coefficients [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2016. т.Т. 19,N № 2.-С.173-182
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15. | Ж16425 Boiko I. I. Dependence of the collision integral on electric field [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2015. т.Т. 18,N № 2.-С.138-143
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16. | Ж74419 Boiko I. V. Motivation and stimulation of effective teaching and learning process [] // Advanced education, 2015,N Вип. 3.-С.20-25
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17. | Ж16425 Boiko I. I. Comparison of some different ways used for approximate solution of kinetic equation and calculations of carrier mobility [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2017. т.Т. 20,N № 4.-С.447-457
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18. | Ж16425 Boiko I. I. Influence of inter-electron scattering on the form of non-equilibrium distribution function of band carriers [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2018. т.Т. 21,N № 2.-С.114-124
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19. | Ж16425 Boiko I. I. Influence of inter-electron scattering on the form of non-equilibrium distribution function of band carriers [] // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2019. т.Т. 22,N № 2.-С.139-149
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20. | Ж16425 Boiko I. I. Kinetic equation having the integral scattering term with a linear form of external electrical and magnetic fields [] / I. I. Boiko // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2021. т.Т. 24,N № 1.-С.34-42
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